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| (R) BUL1101E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA s s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA s APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 3 2 DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value 1100 450 V (BR)EBO 3 6 1.5 3 70 -65 to 150 150 Unit V V V A A A A W o o C C April 2003 1/7 BUL1101E THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 1100 V I E = 1 mA 12 Min. Typ. Max. 100 24 Unit A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time Repetitive Avalanche Energy I C = 100 mA 450 V IC = 1 A IC = 1 A I C = 250 mA IC = 2 A I C = 2.5 A V BB(off) = -5 V I B1 = - I B2 = 0.5 A (see figure 1) L = 2 mH I BR 2.5A I B = 200 mA I B = 200 mA V CE = 5 V V CE = 5 V V CC = 125 V t P = 300 s 20 6 0.25 1 1.5 V V 38 10 60 15 2 700 s ns mJ ts tf E ar 400 C = 1.8 nF (see figure 2) 6 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BUL1101E Safe Operating Area Derating Curve Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/7 BUL1101E DC Current Gain Resistive Load Switching Times Reverse Biased Safe Operating Area 4/7 BUL1101E Figure 1: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Figure 2: Energy Rating Test Circuit 5/7 BUL1101E TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 BUL1101E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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